Semiconductor manufacturing apparatus and method for assisting monitoring and analysis of the same

ABSTRACT

To provide a semiconductor manufacturing apparatus that can easily and quickly monitor and analyze the state of a semiconductor processing apparatus and a method for assisting the monitoring and analysis thereof. A semiconductor manufacturing apparatus includes: detecting means  7, 8  that detects, as a plurality of state signals, at least either of a plurality of spectra obtained by separating plasma light emission generated in a processing chamber  2  of a semiconductor processing apparatus  1  or a plurality of apparatus state signals that indicate states of the apparatus; apparatus event information output means  9  that outputs the state of the semiconductor processing apparatus in a current process step; conversion means  14, 17, 18  that converts a combination of the plurality of state signals detected by the detecting means  7, 8  into respective particular figures; and display position controlling means  20  that displays the figures generated by the conversion means  14, 17, 18  at predetermined display positions associated with the process step.

The present application claims priority from Japanese patent application No. 2004-100136 filed on Mar. 30, 2004, the content of which is hereby incorporated by reference into this application.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor manufacturing apparatus and a method for assisting monitoring and analysis of the same. In particular, it relates to a semiconductor manufacturing apparatus whose state can be easily monitored and analyzed and a method for assisting monitoring and analysis of the apparatus.

2. Description of the Related Art

In semiconductor manufacturing, improvement of the overall equipment effectiveness (OEE) of semiconductor manufacturing apparatus is one important factor in terms of manufacturing efficiency.

A primary reason for the deterioration of the overall equipment effectiveness is the quality control (QC) period or running-in period for assuring a high process stability of a semiconductor processing apparatus. Besides, considerable process failures occur because of deterioration of the manufacturing apparatus with time or the like, or considerable shutdown periods occurring due to unexpected abnormalities or the like.

To improve the overall equipment effectiveness, it is essential not only to prevent occurrence of such troubles but also to make the apparatus recover to its normal state as quick as possible after such troubles or abnormalities occur. To achieve this, it is required to quickly and accurately diagnose the state of the apparatus.

As a system for readily monitoring the state of a semiconductor manufacturing apparatus, for example, there is known a system that mounts a signal lamp on the top of the apparatus in the semiconductor manufacturing line and indicates the operational state of the apparatus or any abnormality in the apparatus to the operator.

In typical semiconductor manufacturing factories, monitoring and analysis systems that assist detailed diagnosis of the state of semiconductor processing apparatus are widely used. Such monitoring and analysis systems assist the user to monitor and analyze a semiconductor processing apparatus by displaying, on a computer screen, a time-series graph of measurements obtained by a plurality of monitors attached to the apparatus, for example.

FIG. 8 shows an example of graphs displayed by such conventional monitoring and analysis systems. In this example, as process variables indicating the state of the apparatus, a reflected power (a reflected wave power of a high-frequency power for generating plasma), a bias voltage and a plasma emission intensity (average value for the whole wavelength) are displayed in the form of a graph. In this drawing, the broken lines 82 a, 82 b, 82 c, 82 d and 82 e indicate separations of the processings of each of the wafers. Therefore, FIG. 8 shows apparatus state data for five wafers.

Further, the broken lines 84 a, 84 b, 84 c and 84 d indicate separations of process steps in the processing of a single wafer. That is, the section between the Y axis and the broken line 84 a corresponds to a process step No. 1, the section between the broken lines 84 a and 84 b corresponds to a waiting state between process steps, the section between the broken lines 84 b and 84 c corresponds to a process step No. 2, the section between the broken lines 84 c and 84 d corresponds to a process step No. 3, and the section between the broken lines 84 d and 82 a corresponds to a process step No. 4.

As described above, in semiconductor manufacturing processes, a single wafer may be processed in a single process which comprises a plurality of process steps. In such a case, the system for monitoring and analyzing the apparatus state has to conduct monitoring and analysis for each process step. Thus, display for each process step described above is required.

BRIEF SUMMARY OF THE INVENTION

However, the system that uses a signal lamp to indicate the apparatus state to the operator is capable of representing only a few apparatus states using the signal lamp. Thus, it is difficult to address a time variation of the apparatus or process, a sudden abnormality or the like.

Besides, the above-described monitoring and analysis systems used commonly in semiconductor manufacturing factories must handle enormous volumes of data of various types. Therefore, the monitoring and analysis operations require considerable time and effort, and thus, the operation efficiency is reduced.

Signals to be monitored or analyzed include various kinds of process variables, such as gas flow rate, pressure, and electrical signals. However, it is impossible to display all the process variables on the display device of the computer. Therefore, generally, the user of the system selects several process variables based on the experience or past analysis result and only the selected variables are displayed.

In the case where several process variables are selected and displayed individually in the form of graphs, for example, it is hard to understand the variation or trend of each process variable. Therefore, considerable time and effort is required for diagnosing the apparatus state and process state. In such a case, generally, a large amount of data is handled collectively using a statistical analysis technique, in particular, a multivariate analysis technique in recent years. However, in this approach, it is difficult to select an effective technique or find the meanings of values obtained as a result of analysis. Thus, in order to use the approach effectively, it is required to conduct a long-term and detailed process analysis and fully understand the technique.

The present invention has been devised in view of such problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus that can easily and quickly monitor and analyze the state of a semiconductor manufacturing apparatus and a method for assisting the monitoring and analysis.

In order to attain the object, the present invention adopts the following means:

-   -   detecting means that detects, as a plurality of state signals,         at least either of a plurality of spectra obtained by separating         plasma light emission generated in a processing chamber of a         semiconductor processing apparatus or a plurality of apparatus         state signals that indicate states of the apparatus; apparatus         event information output means that outputs the state of the         semiconductor processing apparatus in a current process step;         conversion means that converts a combination of the plurality of         state signals detected by the detecting means into respective         particular figures; and display position controlling means that         displays the figures generated by the conversion means at         predetermined display positions associated with the process         step.

Owing to the components described above, the present invention can provide a semiconductor manufacturing apparatus whose state can be easily and quickly monitored and analyzed and a method for assisting monitoring and analysis thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating an overall arrangement of a semiconductor manufacturing apparatus according to an embodiment of the present invention;

FIG. 2 shows an example of a display screen displayed on a display device by state monitoring/analysis assisting means;

FIG. 3 shows another example of the display screen displayed on the display device by the state monitoring/analysis assisting means;

FIG. 4 shows a graph of process step No. 2 extracted from graphs shown in FIG. 2;

FIG. 5 shows a graph showing a bias voltage extracted from the graphs in FIG. 2;

FIG. 6 shows the graph of process step No. 2 extracted from the graph shown in FIG. 5;

FIG. 7 shows a graph of a bias voltage extracted from the graphs in FIG. 2; and

FIG. 8 shows an example of graphs displayed by a conventional monitoring and analysis system.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, the most preferred embodiment of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a diagram illustrating an overall arrangement of a semiconductor manufacturing apparatus according to the embodiment of the present invention. In FIG. 1, a semiconductor manufacturing apparatus 100 comprises a semiconductor processing apparatus 1 and state monitoring/analysis assisting means 13. The semiconductor processing apparatus 1 produces plasma 5 in a chamber 2 and processes a sample placed on a stage 4 in the chamber 2, such as a wafer 3, using the plasma.

The light of the plasma 5 emitted from the chamber 2 is transmitted to an emission spectrometer 7 through an optical fiber 6 attached to an observation window of the chamber 2. The emission spectrometer 7 separates the plasma emission into spectral components and transfers the intensities of the spectral components (spectra) to the apparatus state monitoring/analysis assisting means 13 via an interface 10 at a sampling cycle of the emission spectrometer, for example. Some semiconductor processing apparatuses may use no plasma in processing. In the case where such a semiconductor processing apparatus is used, only an apparatus state sensor output may be used as described later.

An apparatus state sensor 8 transfers electric signals of the semiconductor processing apparatus 1 and various signals indicating the detection values of the gas flow rate, gas pressure or the like of the apparatus, that is, process variables, to the state monitoring/analysis assisting means 13 via an interface 11 at a preset sampling cycle.

When an apparatus event, such as a start or end of processing, occurs, apparatus event information output means 9 transfers manufacture management information about the semiconductor processing apparatus 1, such as the lot name, wafer number, process step number and processing time for the processing at that time, to the apparatus state monitoring/analysis means 13 via an interface 12.

A state vector generating means 14 generates a state vector 14A based on the emission spectrometer output and the apparatus state sensor output (state signals) received via the interfaces 10 and 11, respectively. In addition, time-stamping means 15 imparts a time stamp to the output (manufacture management information) of the apparatus event information output means received via the interface 12 based on a timing signal from a clock 16. At the same time, it imparts the same time stamp to the state vector 14A. That is, the manufacture management information and the state vector are managed synchronously.

The timing at which the state vector generating means 14 converts the output of the emission spectrometer 7 or apparatus state sensor into the state vector 14A can be chosen arbitrarily. However, preferred timings are as follows.

(1) The monitoring values for each wafer processed in the semiconductor processing apparatus 1 are time-averaged for the processing duration of the wafer, and the average value is output as the state vector 14A (when the processing of the wafer is completed, for example).

(2) The monitoring values for each wafer are time-averaged for each process step, and the average value is output as the state vector 14A (when each process step of the wafer is completed, for example).

(3) Conversion and output are successively conducted. That is, the data received via the interface 10 or 11 is converted into the state vector 14A and output at the sampling cycle of the data.

Color conversion means 17 converts the state vector 14A into a color signal. Here, the state vector generating means 14 may convert only one of the outputs of the emission spectrometer 7 and apparatus state sensor 8 into the state vector 14A and transmit the state vector 14A to the color conversion means 17.

If the outputs of the emission spectrometer 7 and apparatus state sensor 8 are converted into the state vector 14A, all the outputs of the emission spectrometer 7 and apparatus state sensor 8 are converted into color signals by the color conversion means 17. Alternatively, if only the output of the apparatus state sensor 8 is converted into the state vector 14A, the output of the apparatus state sensor 8 is converted into a color signal by the color conversion means 17.

That is, the state vector generating means 14, the color conversion means 17 and color generating means 18 cooperate to convert a plurality of spectra output from the emission spectrometer 7 into a combination of a plurality of components constituting a state vector 14A and convert the resulting combination of components into color signals. In addition, they convert a combination of a plurality of apparatus state signals detected by the apparatus state sensor 8 into a combination of a plurality of components of a state vector 14A and convert the resulting combination into color signals.

The color conversion means 17 preferably produces R, G and B signals, which are commonly used in display operations of computers, as a result of conversion. The following are specific examples of the color conversion means 17.

(1) For example, of the variables of the state vector 14A, three variables that are optimum to represent the state of the processing apparatus are extracted, and the variables are assigned to the signal intensities of the R, G and B signals respectively. The three variables are preferably normalized or otherwise processed because the values have different means regardless of whether they are different physical quantities (units) or the same physical quantity.

(2) The variables of the state vector 14A are separated into three groups, average values are calculated for the respective groups, and the average values are assigned to the R, G and B signals respectively. Again, the variables are preferably normalized or otherwise processed.

(3) A color system, which is used for representing colors, is used to virtually generate colors. For example, the XYZ color system prescribed in JIS-Z-8701 which represents colors by numeric values may be used to reproduce colors on the assumption that the state vector 14A is a spectral distribution, thereby determining the R, G and B signals. The XYZ color system can be represented as: [Formula 1] $\begin{matrix} \begin{matrix} {X = {K{\int_{380}^{780}{{S(\lambda)}{\overset{\_}{x}(\lambda)}\quad{\mathbb{d}\lambda}}}}} \\ {Y = {K{\int_{380}^{780}{{S(\lambda)}{\overset{\_}{y}(\lambda)}\quad{\mathbb{d}\lambda}}}}} \\ {Z = {K{\int_{380}^{780}{{S(\lambda)}{\overset{\_}{z}(\lambda)}\quad{\mathbb{d}\lambda}}}}} \end{matrix} & (1) \end{matrix}$ where

-   -   S(λ): relative spectral distribution of radiation from light         source     -   {overscore (x)}(λ), {overscore (y)}(λ), {overscore (z)}(λ):         color matching functions in XYZ color system     -   K: factor of proportionality         In these equations, if the relative spectral distribution S(λ)         is replaced with a state vector Ei (i=1, 2, 3, . . . , N, where         N is the number of components of the state vector), the         apparatus state can be converted into color information. That         is, the above equations are changed into the following equations         (2). Here, the state vector Ei corresponds to the state vector         14A described above.         [Formula 2] $\begin{matrix}         \begin{matrix}         {X = {K_{E}{\sum\limits_{i = 1}^{N}{E_{i} \cdot {\overset{\_}{x}\left( \lambda_{i} \right)} \cdot {\Delta\lambda}}}}} \\         {Y = {K_{E}{\sum\limits_{i = 1}^{N}{E_{i} \cdot {\overset{\_}{y}\left( \lambda_{i} \right)} \cdot {\Delta\lambda}}}}} \\         {Z = {K_{E}{\sum\limits_{i = 1}^{N}{E_{i} \cdot {\overset{\_}{z}\left( \lambda_{i} \right)} \cdot {\Delta\lambda}}}}}         \end{matrix} & (2)         \end{matrix}$         where     -   N: number of components of apparatus state vector (number of         monitoring values)     -   i: i=1, 2, Λ, N     -   E_(i): apparatus state vector     -   Δλ: wavelength range ((780-380)/N)     -   λ_(i): λ_(i)=λ₀+{(i−1)*Δλ} (λ₀=380)     -   {overscore (x)}(λ_(i)),{overscore (y)}(λ_(i)),{overscore         (z)}(λ_(i)): color matching functions in XYZ color system     -   K_(E): factor of proportionality         In addition, conversion from the XYZ color system to the R, G         and B signals is represented by the following equations.         R=1.9104×X−0.5338×Y−0.2891×Z         G=−0.9844×X+1.9985×Y−0.0279×Z  (3)         B=0.0585×X−0.1187×Y+0.9017×Z

The color generating means 18 generates a color signal 19 from the R, G and B signals obtained by the color conversion means 17.

Display position controlling means 20 displays the color signal generated by the color generating means 18 at a display position on a display device 22 which is specified by the apparatus event information output means 9, as describer later. In addition, the display position controlling means 20 may receive the apparatus state sensor output, which is a component of the state vector, from the state vector generating means 14 and display the received sensor output values (for example, gas flow rate values) at a display position on the display device 22 which is specified by the apparatus event information output means 9 in the form of a graph.

The semiconductor manufacturing apparatus shown in FIG. 1 can serve as a monitoring system that monitors the state of the apparatus in real time using the state monitoring/analysis assisting means 13. In addition, it can serve as an analysis system that sequentially accumulates the information about the state of the apparatus and analyzes the history of the apparatus state or process state.

Now, a processing of the state monitoring/analysis assisting means will be described with reference to FIGS. 2 to 7.

FIG. 2 shows an example of a display screen displayed on the display device 22 by the state monitoring/analysis assisting means. In FIG. 2, graphs 40 in the upper area are time-series graphs each showing a reflected power, a bias voltage and an emission intensity, which are components of the state vector 14A obtained when the semiconductor processing apparatus 1 successively processes five wafers.

The processing time for each wafer is separated from the others by the broken lines 42 a, 42 b, 42 c, 42 d and 42 e. Broken lines inside the sections separated by the above-mentioned broken lines indicate separations of a plurality of process steps of the processing of each wafer. For example, the broken lines 44 a, 44 b, 44 c and 44 d between the Y axis and the broken line 42 a indicate separations of five process steps of the processing of one wafer. That is, the section between the Y axis and the line 44 a corresponds to a process step No. 1, the section between the lines 44 a and 44 b corresponds to a waiting state between process steps, the section between the lines 44 b and 44 c corresponds to a process step No. 2, the section between the lines 44 c and 44 d corresponds to a process step No. 3, and the section between the lines 44 d and 42 e corresponds to a process step No. 4. The positions of the broken lines for indicating the processing times for the respective wafers and the positions of the lines for indicating the separations of the process steps can be specified by the apparatus event information output means 9 shown in FIG. 1.

In this example, the reflected power, the bias voltage and the emission intensity (average value for the overall wavelength) are shown in the form of graphs as described above. However, since they are different physical quantities (that is, expressed in different units), in order to show them on the same Y axis, the data are normalized so that the maximum values are 1, for example. Such display facilitates understanding of the trends of the process variables.

A graph 50 in the lower area of FIG. 2 shows color signals displayed on the display device 22 at display positions specified by the apparatus event information output means 9, the color signals being converted from the state vector 14A shown in FIG. 1 by the color conversion means 17 and the color generating means 18.

In this drawing, reference numeral 52 a denotes a state of the apparatus in the process step No. 1. Similarly, reference numeral 52 b denotes a state thereof in the process step No. 2, reference numeral 52 c denotes a state thereof in the process step No. 3, and reference numeral 52 d denotes a state thereof in the process step No. 4. Since the state of the apparatus is indicated by colors in this way, in monitoring or analysis of the state of the apparatus, the state of the apparatus or the state of the operation thereof can be quickly recognized without detailed observation of the individual process variables or trends thereof.

FIG. 3 shows an example of a display screen displayed on the display device 22 by the state monitoring/analysis assisting means.

In the example shown in FIG. 2, graphs for the processings of the respective wafers are arranged side by side along the time axis. To the contrary, in the example shown in FIG. 3, the graphs for the processings of the respective wafers are displayed with the time axes being superimposed. As described above, in a semiconductor manufacturing process, one process may comprise a plurality of process steps. In such a case, the plurality of process steps of one process are conducted under different processing conditions. Thus, to compare the processing of each wafer with the processings of the others, the comparison has to be made between the equivalent process steps.

In a comparison between equivalent process steps, the way of display shown in FIG. 2 is not effective for visual comparison. However, the way of display shown in FIG. 3 facilitates comparison between process steps and understanding of the variations of the processing and apparatus state among the wafers. For example, a state color 62 a for the process step No. 2 for a first wafer, a state color 62 b for the process step No. 2 for a second wafer, a state color 62 c for the process step No. 2 for a third wafer, a state color 62 d for the process step No. 2 for a fourth wafer and a state color 62 e for the process step No. 2 for a fifth wafer are displayed with the time axes of the processings of the wafers being superimposed. That is, the graphs are displayed on the display device with the processing start points coinciding with each other.

If the graphs for the processing of the respective wafers are displayed with the time axes being superimposed in this way, visual comparison is facilitated because the historical information about the processings of the wafers are arranged in the vertical direction. In the example shown in FIG. 3, it is shown that the state color 62 d for the fourth wafer differs from the state colors 62 a, 62 b, 62 c and 62 e for the other wafers. That is, it is shown that the fourth wafer has been processed under a processing condition different from those of the other wafers. In the upper area of the display screen, graphs of the data including the reflected power, bias voltage and emission intensity obtained during the processings of the wafers can be displayed.

Alternatively, in the upper area of the display screen, the data for the fourth wafer including the reflected power, bias voltage and emission intensity may be displayed in the form of a graph in contrast with the data for the other wafers, and the user may stop the processing by the apparatus based on the graph. In this way, defective wafers can be prevented from being produced in large numbers. In addition, maintenance can be conducted at an adequate cycle, and, as a result, the apparatus operability can be improved.

FIG. 4 shows the graph for the process step No. 2 (indicating the bias voltage) of the graphs shown in FIG. 2 and the color signals indicating the state of the apparatus. State colors 72 a, 72 b, 72 c, 72 d and 72 e are arranged side by side. Thus, such a way of display also facilitates comparison of the state of the apparatus between equivalent process steps.

FIG. 5 shows a time series graph showing the bias voltage extracted from the graphs in FIG. 2. From the time-series graph of only the bias voltage, information other than the bias voltage cannot be provided. However, in the example shown in this drawing, the inside areas of the graph are filled with colors representing states of the apparatus. Thus, additional information that cannot be provided by simple graph display can be provided.

Specifically, in FIG. 5, a state color 74 a indicates the state of the apparatus in the process step No. 1, a state color 74 b indicates the state of the apparatus in the process step No. 2, a state color 74 c indicates the state of the apparatus in the process step No. 3, and a state color 74 d indicates the state of the apparatus in the process step No. 4.

FIG. 6 shows the graph for only the process step No. 2 extracted from the graph shown in FIG. 5. In the graph shown in FIG. 6, state colors 76 a, 76 b, 76 c, 76 d and 76 e for the process step No. 2 for the five wafers are shown side by side. In this example, comparison of the apparatus state between equivalent process steps can be made quickly. Also in the example in this drawing, the inside areas of the graph may be filled with colors representing states of the apparatus.

FIG. 7 shows a time series graph showing the bias voltage extracted from the graphs in FIG. 2. From this graph, information other than the bias voltage cannot be provided. However, in the example shown in this drawing, for each process step, the background area of the graph is filled with a state color representing the state of the apparatus. Thus, an apparatus state other than the bias voltage can be shown. Specifically, in FIG. 7, a state color 78 a indicates the state of the apparatus in the process step No. 1, a state color 78 b indicates the state of the apparatus in the process step No. 2, a state color 78 c indicates the state of the apparatus in the process step No. 3, and a state color 78 d indicates the state of the apparatus in the process step No. 4.

The above description has been made concerning the example in which the states of the apparatus are represented by colors. However, according to the present invention, the states of the apparatus can be represented by information other than colors. For example, the R, G and B signals from the color conversion means 17 may be associated with figures (or sounds), such as characters or symbols, which represent states of the apparatus. In other words, the state vector 14A may be associated with a particular figure (or sound). And then, the figure(s) may be displayed on the display device at a display position specified by the apparatus event information output means, or the sound(s) may be produced at the timing specified by the apparatus event information output means.

As described above, according to this embodiment, the state of the manufacturing apparatus in operation can be displayed by color information or the like and can be monitored and analyzed using the color information or the like. Thus, the state of the apparatus can be quickly and easily monitored and analyzed during operation without observing individual monitoring values.

While the semiconductor manufacturing apparatus and the method for assisting monitoring and analysis of the same have been described as an embodiment of the present invention, the present invention is not limited thereto. The present invention can be applied to a manufacturing apparatus for a liquid crystal display device and a method for manufacturing the same, for example. 

1. A semiconductor manufacturing apparatus, comprising: detecting means that detects, as a plurality of state signals, at least either of a plurality of spectra obtained by separating plasma light emission generated in a processing chamber of a semiconductor processing apparatus or a plurality of apparatus state signals that indicate states of the apparatus; apparatus event information output means that outputs the state of the semiconductor processing apparatus in a current process step; conversion means that converts a combination of the plurality of state signals detected by said detecting means into respective particular figures; and display position controlling means that displays the figures generated by the conversion means at predetermined display positions associated with the process step.
 2. A semiconductor manufacturing apparatus, comprising: an emission spectrometer that separates plasma light emission generated in a processing chamber of a semiconductor processing apparatus; apparatus event information output means that outputs the state of the semiconductor processing apparatus in a current process step; color signal generating means that converts the output of said emission spectrometer into a plurality of spectra and converts the resulting combination of a plurality of spectra into color signals; and display position controlling means that displays the color signals generated by the color signal generating means at display positions on a display device which are specified by the apparatus event information output means.
 3. A semiconductor manufacturing apparatus, comprising: apparatus state sensor that detects a plurality of apparatus state signals that represents states of a semiconductor processing apparatus; apparatus event information output means that outputs the state of the semiconductor processing apparatus in a current process step; color signal generating means that converts a combination of the plurality of apparatus state signals detected by said apparatus state sensor into color signals; and display position controlling means that displays the color signals generated by the color signal generating means at display positions on a display device which are determined by the apparatus event information output means.
 4. The semiconductor manufacturing apparatus according to claim 2 or 3, wherein said color signals are displayed on the display device with the time axes thereof being superimposed in accordance with a signal indicating a processing point in time for each sample which is output by the apparatus event information output means.
 5. The semiconductor manufacturing apparatus according to claim 2 or 3, wherein said color signals are displayed on the display device in a time-series manner in accordance with information output by the apparatus event information output means.
 6. A semiconductor manufacturing apparatus, comprising: an emission spectrometer that separates plasma light emission generated in a processing chamber of a semiconductor processing apparatus; apparatus state sensor that detects a plurality of apparatus state signals that represents states of a semiconductor processing apparatus; apparatus event information output means that outputs the state of the semiconductor processing apparatus in a current process step; color signal generating means that converts the output of said emission spectrometer into a plurality of spectra and converts the resulting combination of a plurality of spectra into color signals; and display position controlling means that displays the color signals generated by the color generating means and the apparatus state signals detected by the apparatus state sensor at display positions determined by the apparatus event information output means.
 7. The semiconductor manufacturing apparatus according to claim 6, wherein said color signals and apparatus state signals are displayed on the display device with the time axes thereof being superimposed in accordance with a signal indicating a processing point in time for each sample which is output by the apparatus event information output means.
 8. The semiconductor manufacturing apparatus according to claim 6, wherein said color signals and apparatus state signals are displayed on the display device in a time-series manner in accordance with information output by the apparatus event information output means.
 9. A method for assisting monitoring and analysis of a semiconductor manufacturing apparatus, comprising: a step of detecting, as a plurality of state signals, at least either of a plurality of spectral output signal obtained by separating plasma light emission generated in a processing chamber or a plurality of apparatus state signals that indicate states of the apparatus and converting a combination of the plurality of detected state signals into respective particular figures; and a step of displaying said figures at predetermined display positions associated with a process step.
 10. A method for assisting monitoring and analysis of a semiconductor manufacturing apparatus, comprising: a step of separating plasma light emission generated in a processing chamber into a plurality of spectra and converting a combination of the plurality of spectra into color signals; and a step of displaying said color signals at display positions specified by apparatus event information output means, the apparatus event information output means indicating the state of the apparatus in a current process step.
 11. A method for assisting monitoring and analysis of a semiconductor manufacturing apparatus, comprising: a step of converting a combination of a plurality of apparatus state signals detected by an apparatus state sensor into color signals; and a step of displaying said color signals at display positions specified by apparatus event information output means, the apparatus event information output means indicating the state of the apparatus in a current process step.
 12. A semiconductor manufacturing apparatus, comprising: detecting means that detects, as a plurality of state signals, at least either of a plurality of spectra obtained by separating plasma light emission generated in a processing chamber of a semiconductor processing apparatus or a plurality of apparatus state signals that indicate states of the apparatus; apparatus event information output means that outputs the state of the semiconductor processing apparatus in a current process step; conversion means that converts a combination of the plurality of state signals detected by said detecting means into respective particular sound information; and reproduction means that reproduces the sound information generated by the conversion means at predetermined display timings associated with the process step. 